Structure-Size Optimization and Fabrication of 3.7 GHz Film Bulk Acoustic Resonator Based on AlN Thin Film

Film bulk acoustic-wave resonator based ultraviolet sensor

This letter described ultraviolet UV radiation sensing with ZnO based film bulk acoustic-wave resonator FBAR . The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 W /cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase in the FBAR UV sensor was proposed to be due to ...

Aluminum Nitride (AlN) Film Based Acoustic Devices: Material Synthesis and Device Fabrication

Thin film bulk acoustic wave resonators: a technology overview

This paper describes a high quality thin film piezoelectric aluminium nitride technology developed for applications in bulk acoustic wave resonators and filters. The fabrication of both SMR and FBAR resonators is described, and the main characteristics of these devices are reviewed.

THE THIN FILM CAPACITORS WITH AlN DIELECTRIC

The work is focused on thin film technologies especially on sputtering of dielectric thin film layers. The set of thin film capacitors was created on silica glass substrate. Aluminum electrodes of separated capacitors are deposited by method of vacuum evaporation. The AlN dielectric layer was prepared by reactive high frequency sputtering from aluminum target in nitrogen atmosphere. Dielectric ...

Thin-Film Bulk Acoustic Resonators and Filters Using ZnO and Lead–Zirconium–Titanate Thin Films

This paper presents the findings of a design, modeling, and fabrication study of ZnO and PbZr0 3Ti0 7O3 thin-film bulk acoustic resonators and filters. Measurements of the high-frequency responses of ZnO resonators having different area are used to develop an acoustic model that accurately represents resonator impedance data. The models are also used to interpret -parameter measurements on thin...