Structure-property relationship of Co2MnSi thin films in response to He+-irradiation
نویسندگان
چکیده
منابع مشابه
architecture and engineering of nanoscale sculptured thin films and determination of their properties
چکیده ندارد.
15 صفحه اولDry etching of Co2MnSi magnetic thin films using a CH3OH/Ar based inductively coupled plasma
The inductively coupled plasma etching characteristics of Co2MnSi thin films patterned using a TiN hard mask were investigated by the addition of CH3OH to Ar gas. As the CH3OH concentration increased, the etch rates of Co2MnSi magnetic thin films and TiN hard mask decreased, but the etch profile improved. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profil...
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We have investigated the adsorption of 4He onto a quench-condensed H2 film by means of surface state electrons. Oscillations in the surface state electron conductivity clearly reveal the layerwise character of the adsorption. At temperatures below 2K we have observed an anomaly in the conductivity around the completion of the first monolayer. This new feature is interpreted as an indication of ...
متن کاملEffect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions.
Fully epitaxial magnetic tunnel junctions (MTJs) with Co-based Heusler alloy Co(2)MnSi electrodes and a MgO tunnel barrier were fabricated with various values of Mn composition α for Co(2)Mn(α)Si in Co(2)Mn(α)Si/MgO/Co(2)Mn(α)Si MTJs. The tunnel magnetoresistance (TMR) ratios at both 4.2 K and room temperature (RT) increased systematically with increasing α in Co(2)Mn(α)Si electrodes from Mn-de...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2019
ISSN: 2045-2322
DOI: 10.1038/s41598-019-39435-4