Structure of MgO Films Prepared by Ion Beam Sputtering

Effect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

Point defects in Sc2O3 thin films by ion beam sputtering.

We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18)  cm(-3). These results show a correlation between the increase of oxy...

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

STRUCTURE AND MAGNETISM OF Fe/Al MULTILAYERED FILMS BY ION BEAM SPUTTERING METHOD

The crystal structure and magnetic properties of Fe/AI multilayered films prepared using the ion beam sputtering method have been investigated. The crystallite orientation and magnetism of Fe layers were found to depend significantly on A1 layer thickness. This resutt may be caused by the crystallographic interaction between Fe and A1 layers.

effect of thickness on structural and morphological properties of aln films prepared using single ion beam sputtering