Structure and Morphology of Anthraquinone Triazene Films on Silicon Substrate

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

GROWTH AND STRUCTURE OF NONCRYSTALLINE SiO2 FILMS ON SILICON

Oxide thickness and oxidation time data related to thermal oxidation of silicon are interpreted by a model in which the oxygen transport through the noncrystalline oxide has two components: one is the usual random-walk diffusion dependent on thickness and the other one is independent of thickness. The latter one is attributed to transport through structural channels.

متن کامل

Structure and morphology of thin MgO films on Mo(001)

We report on the structural evolution versus thickness of MgO thin films grown epitaxially on Mo(001) and on the correlation between structure and surface morphology. The misfit strain induced by the mismatch with the substrate is relieved between 1 and 7 ML MgO due to the formation of an ordered network of interfacial misfit dislocations aligned along the MgO <110> directions, particularly evi...

متن کامل

the structure of lie derivations on c*-algebras

نشان می دهیم که هر اشتقاق لی روی یک c^*-جبر به شکل استاندارد است، یعنی می تواند به طور یکتا به مجموع یک اشتقاق لی و یک اثر مرکز مقدار تجزیه شود. کلمات کلیدی: اشتقاق، اشتقاق لی، c^*-جبر.

15 صفحه اول

Redistribution of implanted species in polycrystalline silicon films on silicon substrate

Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 3...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Фізика і хімія твердого тіла

سال: 2020

ISSN: 2309-8589,1729-4428

DOI: 10.15330/pcss.21.1.117-123