Structural characteristics of bias sputtered CoCrTa/Cr films
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Characterization of bias magnetron sputtered tantalum oxide films for capacitors
Tantalum oxide films have been deposited by sputtering of tantalum target in an oxygen partial pressure of 2x10 mbar under various substrate bias voltages in the range from 0 to -150 V on glass and silicon substrates held at room temperature. The influence of substrate bias voltage on the chemical binding configuration, crystallographic structure, electrical and dielectric properties has been s...
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ژورنال
عنوان ژورنال: IEEE Transactions on Magnetics
سال: 1993
ISSN: 0018-9464,1941-0069
DOI: 10.1109/20.281266