Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy

GaN films are grown on [0 0 1] GaAs substrates by plasma-assisted molecular beam epitaxy using a three-step process that consists of a substrate nitridation, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. X-ray diffraction and transmission electron microscopy indicate that this method promotes prismatic growth of c-oriented a-GaN. Photoluminescence studies show...

Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

beam epitaxy on Si substrates Q. Wang, S. Zhao, A. T. Connie, I. Shih, Z. Mi, T. Gonzalez, M. P. Andrews, X. Z. Du, J. Y. Lin, and H. X. Jiang Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada Department of Chemistry, McGill University, 801 Sherbrooke St West, Montreal, Quebec H3A 0B8, Canada Department of Electrical a...

Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy

In this work, we have studied the dependence of the size and luminescence of self-assembled InAs quantum dots (SAQDs) on the growth conditions. The SAQDs were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). Their structural and optical properties were studied by atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). The growth of the InAs SAQDs was in situ mon...

Structural properties of Bi2Te3 and Bi2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates

Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

We have investigated optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected in both the narrow x-ray peakwidths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower xray peakwidth for both symmetric and asy...