Structural and electrical investigations of MBE-grown SiGe nanoislands
نویسندگان
چکیده
منابع مشابه
Electrical activation and electrical properties of arsenic doped Hg1.CdTe epilayers grown by MBE
The annealing and electrical properties of extrinsic in situ doped mercury cadmium telluride (Hg1.CdTe) epilayers grown by molecular beam epitaxy (MBE) on (211)B CdTe/Si and CdZnTe substrates are studied. The doping is performed with an elemental arsenic source. HgCdTe epilayers of CdTe mole fraction in the range of midwavelength infrared (MWIR) are grown at substrate temperatures of 175-185°C....
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ژورنال
عنوان ژورنال: Applied Physics A
سال: 2017
ISSN: 0947-8396,1432-0630
DOI: 10.1007/s00339-017-1448-6