Strongly bound Mott-Wannier excitons in GeS and GeSe monolayers
نویسندگان
چکیده
منابع مشابه
Strongly bound excitons in gapless two-dimensional structures
Yufeng Liang,1 Ryan Soklaski,1 Shouting Huang,1 Matthew W. Graham,2 Robin Havener,3 Jiwoong Park,4,5 and Li Yang1,* 1Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, USA 2Laboratory for Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA 3School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA 4D...
متن کاملGiant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS
SnS, GeSe, and GeS Ruixiang Fei, Wenbin Li, Ju Li, and Li Yang Department of Physics, Washington University, St. Louis, Missouri 63130, USA Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridg...
متن کاملSupplementary Information Strongly bound excitons in anatase TiO2 single crystals and nanoparticles
1Laboratory of Ultrafast Spectroscopy, ISIC and LACUS, EPFL, CH-1015 Lausanne, Switzerland 2Laboratory for Ultrafast Microscopy and Electron Scattering, IPHYS and LACUS, EPFL, CH-1015 Lausanne, Switzerland 3Unit of Nonlinear Physics and Mathematical Modeling, Department of Engineering, Università Campus Bio-Medico di Roma, Via Álvaro del Portillo 21, I-00128, Rome, Italy 4Center for Life Nano S...
متن کاملTwo-dimensional Wannier excitons - effects of a random adiabatic potential
We investigate the absorption spectrum and the distribution of radiative decay times for twodimensional (2D) excitons in semiconductor quantum wells, as affected by an adiabatic white-noise random potential. Such a potential could result from atomic-scale fluctuations in the composition of an alloy semiconductor, or in quantum well thickness. We find in general that the shortest radiative decay...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.94.155428