Strong Efficiency Improvement of SOI-LEDs Through Carrier Confinement
نویسندگان
چکیده
منابع مشابه
Investigation of Efficiency Droop for InGaN-based LEDs with Carrier Localization State and Polarization Effect
We prepared wavelength-dependent InGaN-based light emitting diodes (LEDs) with peak emissions ranging from 400 to 445 nm, and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the emissions of the wavelength-dependent InGaN LEDs underwent blue shifts at elevated currents. In addition, although the external quantum efficiencies (EQEs) changed d...
متن کاملThermophotonics for ultra-high efficiency visible LEDs
The wall-plug efficiency of modern light-emitting diodes (LEDs) has far surpassed all other forms of lighting and is expected to improve further as the lifetime cost of a luminaire is today dominated by the cost of energy. The drive towards higher efficiency inevitably opens the question about the limits of future enhancement. Here, we investigate thermoelectric pumping as a means for improving...
متن کاملEnhancing the Efficiency of Organic LEDs Through Spin-Orbit Coupling of Charge-Transfer States
In this thesis, the possibility of enhancing the efficiency of small molecule organic light-emitting diodes through spin-orbit effects is examined. Because only singlet spin states, statistically one quarter of the total possible states, emit fluorescent light, it has generally been thought that a maximum of 25% efficiency could be attained without the addition of an emissive phosphor. Here, we...
متن کاملReducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods.
Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs). In this paper, we report the suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sa...
متن کاملa generalization of strong causality
در این رساله t_n - علیت قوی تعریف می شود. این رده ها در جدول علیت فضا- زمان بین علیت پایدار و علیت قوی قرار دارند. یک قضیه برای رده بندی آنها ثابت می شود و t_n- علیت قوی با رده های علی کارتر مقایسه می شود. همچنین ثابت می شود که علیت فشرده پایدار از t_n - علیت قوی نتیجه می شود. بعلاوه به بررسی رابطه نظریه دامنه ها با نسبیت عام می پردازیم و ثابت می کنیم که نوع خاصی از فضا- زمان های علی پایدار, ب...
ذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2007
ISSN: 0741-3106
DOI: 10.1109/led.2007.895415