Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

A dual-gate InSb nanosheet field-effect device is realized and used to investigate the physical origin controllability of spin-orbit interaction in a narrow bandgap semiconductor nanosheet. We demonstrate that by applying voltage over dual gate, efficiently tuning can be achieved. also find presence an intrinsic at zero identify its as build-in asymmetry layer structure. Having strong controllable could simplify design realization spintronic deceives, spin-based quantum devices topological devices.