Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates

The role of SrRuO3 bottom layer in strain relaxation of BiFeO3 thin films deposited on lattice mismatched substrates

Articles you may be interested in Role of defects in BiFeO3 multiferroic films and their local electronic structure by x-ray absorption spectroscopy High symmetric SrRuO3 (001) thin films: Perfectly lattice-matched electrodes for multiferroic BiFeO3

A New Paradigm for the Heteroepitaxy of Lattice Mismatched Semiconductors

Strain relaxation in InAs/GaSb heterostructures

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Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection.

Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si(111) substrates was accomplished over a large area by metal-organic chemical vapor deposition. Nanowires showed very uniform diameters and a zinc blende crystal structure. The heterojunctions formed at the interface between the n-type InAs nanowires and the p-type Si substrate were exploited to fabricate vertical arra...

CoSi2 heteroepitaxy on patterned Si(100) substrates

The influence of starting surface topography on the nucleation and growth of epitaxial silicide layers was investigated. CoSi2 layers were grown via the template technique on one-dimensionally patterned Si~100! substrates. These substrates contained mesa stripes, running parallel to Si@011#, and exhibited either a number of Si $hkl% facets, or ‘‘smoothly varying’’ sinusoidal profiles. Conventio...