Strain engineering in III-V photonic components through structuration of SiN_x films

We describe work to quantify the effects of structured dielectric thin films, such as SiNx, at surface III-V semiconductors, in terms strain engineering with applications photonic components waveguides and lasers. show that semiconductor can be engineered by controlling stress film tuning its deposition process. In first part this study, we how control amount built-in mechanical stress, case over a large range, from highly tensile (300 MPa) compressive (−800 MPa), using two different kinds plasma-enhanced chemical vapor reactors: standard capacitively coupled reactor radiofrequency excitation an electron cyclotron resonance microwave excitation. focused on characterizing understanding these films' optical bonding properties through spectroscopic ellipsometry Fourier transform infrared spectroscopy. have also studied their experimentally wafer curvature measurement technique, microstructure fabrication, nanoindentation measurements. second part, accurate measurements distribution induced within GaAs wafers when films are shape elongated stripes variable width, lithography plasma etching. For this, map anisotropic deformation, measuring degree polarization spectrally integrated photoluminescence (PL) generated red laser. PL bulk cubic semiconductors InP is unpolarized, whereas produces some polarization. These maps were measured either or cleaved cross sections. They provide detailed complete image crystal deformation vicinity stressor film. Finally, performed finite element simulations trying reproduce experimental maps. This investigation covering steps, including SiNx mapping field beneath numerical simulation effects, allows us propose set recipes employed for components. Our scheme helpful design components, e.g., predict local changes refractive index due photoelastic effect.