Strain distribution in epitaxial SrTiO3 thin films

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ferroelectricity in strain-free SrTiO3 thin films.

Biaxial strain is known to induce ferroelectricity in thin films of nominally nonferroelectric materials such as SrTiO3. By a direct comparison of the strained and strain-free SrTiO3 films using dielectric, ferroelectric, Raman, nonlinear optical and nanoscale piezoelectric property measurements, we conclude that all SrTiO3 films and bulk crystals are relaxor ferroelectrics, and the role of str...

متن کامل

Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films.

Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO3 thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO3 films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO3 with biaxial strain while t...

متن کامل

Tuning magnetic coupling in Sr2IrO4 thin films with epitaxial strain.

We report x-ray resonant magnetic scattering and resonant inelastic x-ray scattering studies of epitaxially strained Sr2IrO4 thin films. The films were grown on SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates, under slight tensile and compressive strains, respectively. Although the films develop a magnetic structure reminiscent of bulk Sr2IrO4, the magnetic correlations are extremely anisotropi...

متن کامل

Ultrafast photoinduced mechanical strain in epitaxial BiFeO3 thin films

Related Articles Formation of stress-controlled, highly textured, α-SiC thin films at 950°C J. Appl. Phys. 112, 013535 (2012) Epitaxial strain-induced changes in the cation distribution and resistivity of Fe-doped CoFe2O4 Appl. Phys. Lett. 101, 021907 (2012) Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon Appl. Phys. Lett. 100, 232905 (2012) ...

متن کامل

Stabilizing graphitic thin films of wurtzite materials by epitaxial strain.

Recent theory [Phys. Rev. Lett. 96, 066102 (2006)] and experiment [Phys. Rev. Lett. 99, 026102 (2007)] show that (0001) ultrathin films of wurtzite (WZ) materials surprisingly transform into a stable graphitelike structure, but the stability is limited to thicknesses of only a few atomic layers. Using first-principles calculations of both freestanding and substrate-supported thin films, we pred...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2006

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.2424282