Step-edge barriers on GaAs(001)

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Spiral growth and step edge barriers.

The growth of spiral mounds containing a screw dislocation is compared to the growth of wedding cakes by two-dimensional nucleation. Using phase field simulations and homoepitaxial growth experiments on the Pt(111) surface we show that both structures attain the same large scale shape when a significant step-edge barrier suppresses interlayer transport. The higher vertical growth rate of the sp...

متن کامل

Nucleation and step-edge barriers always destabilize step-flow growth of a vicinal surface

We consider the effect of nucleation on a one-dimensional stepped surface, finding that step-flow growth is metastable for any strength of the additional step-edge barrier. The surface is made unstable by the formation of a critical nucleus, whose lateral size is related to the destabilization process on a high-symmetry surface. Arguments based on a critical nucleus of height two, which suggest...

متن کامل

Flat-surface, step-edge, facet–facet, and facet–step diffusion barriers in growth of a Pb mesa

0039-6028/$ see front matter 2008 Elsevier B.V. A doi:10.1016/j.susc.2008.05.009 * Corresponding author. Present address: IPRT Department of Energy, 307D Wilhelm Hall, Ames, IA E-mail address: [email protected] (Y. Han) We obtain important energy parameters for understanding growth kinetics of a faceted Pb mesa. Specifically, extensive calculations of diffusion barriers are performed for a...

متن کامل

Direct measurements of island growth and step-edge barriers in colloidal epitaxy.

Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical Review B

سال: 1993

ISSN: 0163-1829,1095-3795

DOI: 10.1103/physrevb.48.17603