Steep Subthreshold Switching With Nanomechanical FET Relays
نویسندگان
چکیده
منابع مشابه
Superlattice - Source Nanowire FET with Steep Subthreshold Characteristics
The non-scalable room temperature 60 mV/dec subthreshold swing of a conventional MOSFET is a fundamental limit to the continuation of transistor power scaling. In order to further reduce transistor power consumption and transistor footprint, new subthreshold transport mechanisms other than thermionic emission over an energy barrier are required. In this thesis, we devote our efforts towards the...
متن کاملSubthreshold regime has the optimal sensitivity for nanowire FET biosensors.
Nanowire field-effect transistors (NW-FETs) are emerging as powerful sensors for detection of chemical/biological species with various attractive features including high sensitivity and direct electrical readout. Yet to date there have been limited systematic studies addressing how the fundamental factors of devices affect their sensitivity. Here we demonstrate that the sensitivity of NW-FET se...
متن کاملNonlinear Switching Dynamics in a Nanomechanical Resonator
The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability [1], discontinuous jumps [2, 3] and hysteresis [3]. These can be utilized in applications leading, e.g., to precise frequency measurement [4], mixing [5], memory elements [6, 7], reduced noise characteristics in an oscillator [8] or signal amplification [9, 10, 11, 12]. Approaching the quantum...
متن کاملSteep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...
متن کاملTowards GREEN Electronics: Design, Modeling and Fabrication of Steep Subthreshold Slope Switches
Aggressive technology scaling as per Moore’s law has resulted in elevated power dissipation levels especially due to a substantial increase in the subthreshold leakage power. Hence, designing low-power and energy-efficient integrated circuits (or Green Electronics) constitutes a key area for sustaining the irreversible growth of the global electronics and IT industry. Although improving the sub...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2016
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2016.2527743