Stationary dislocation motion at stresses significantly below the Peierls stress: Example of shuffle screw and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si4.svg"><mml:msup><mml:mn>60</mml:mn><mml:mo>?</mml:mo></mml:msup></mml:math> dislocations in silicon

The stationary motion of shuffle screw and 60? dislocations in silicon when the applied shear, ?ap, is much below static Peierls stress,?pmax, proved quantified through a series molecular dynamics (MD) simulations at 1 K 300 K, also by solving continuum-level equation motion, which uses atomistic information as inputs. concept dynamic stress, ?pd, dislocation can never be possible, built upon firm foundation. In MD stress found to 0.33GPa for 0.21GPa dislocation, versus ?pmax 1.71GPa 1.46GPa, respectively. critical initial velocity v0c(?ap) above maintain ?pd<?ap<?pmax found. dependence dissipation associated with then characterized informed into continuum level. A attributed to: (i) periodic lattice resistance smaller than almost everywhere; (ii) change dislocation’s kinetic energy, acts way equivalent reducing ?pmax. results obtained here open up possibilities intensification plastic flow defects accumulations, consequently, strain-induced phase transformations. Similar approaches applicable partial dislocations, twin interfaces.