Stability of Mn2Ru Ga-based multilayer stacks
نویسندگان
چکیده
Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx TiN) interfaces with magnetic electrodes, after annealing at 350∘C. Loss perpendicular anisotropy in MRG is strongly correlated reduction substrate-induced tetragonality due relaxation crystal structure. In absence diffusion, strain chemical ordering within are correlated. The limited solubility both Hf Mo source additional valence electrons, which results an increase compensation temperature Tcomp. This also stabilises anisotropy, compensating for changes defect density. squareness hysteresis loop measured by anomalous Hall effect <10%, making it useful active devices. Furthermore, CoPt3 phase (220) texture free promoted only one that retains its annealing.
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2022
ISSN: ['1879-2731', '0040-6090']
DOI: https://doi.org/10.1016/j.tsf.2022.139104