Spin-memory effect and negative magnetoresistance in hopping conductivity
نویسندگان
چکیده
منابع مشابه
MAGNETORESISTANCE AND HOPPING CONDUCTIVITY IN LaMnO3+δ
Resistivity, ρ (T), of LaMnO3+δ displays between δ = 0 − 0.154 an activated behavior both above and below the paramagnetic (PM) to ferromagnetic transition temperature, TC. The relative magnetoresistance at 8 T reaches the values of – 88 % near TC and – 98 % at T ≈ 20 K. In the PM phase ρ (T) satisfies between TC ~130 − 160 K and Tv ∼ 250 − 270 K the Shklovskii – Efros-like variable-range hoppi...
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S. A. Parameswaran1,2 and S. Gopalakrishnan2,3,4 1Department of Physics and Astronomy, University of California, Irvine, California 92697, USA 2Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106, USA 3Department of Physics and Burke Institute, California Institute of Technology, Pasadena, California 91125, USA 4Department of Engineering Science an...
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)Work supported by the National Science Foundation. *Alfred P. Sloan Research Fellow. E. F. Gross, Vsp. Fiz. Nauk 76, 433 (1962), and 103, 431 (1971) [Sov. Phys. Usp. 5, 195 (1962) and 14, 104 {1971)). A. Compaan and H. Z. Cuxnmins, Phys. Rev. B 6, 4753 (1972). Y. Petroff, P. Y. Yu, and Y. B. Shen, Phys. Bev. Lett. 29, 1558 (1972). P. Y. Yu, Y. R. Shen, Y. Petroff, and L. M. Falicov, Phys. Rev....
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2014
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.89.100201