Spin Hall magnetoresistance in Pt/Y₃Fe₅O₁₂ bilayers grown on Si and Gd₃Ga₅O₁₂ substrates

We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ (YIG) bilayers by focusing on crystallinity, magnetization, and interface roughness controlling post-annealing temperatures. The SMR the Pt/YIG grown Si substrate is comparable to that widely used Gd$_{3}$Ga$_{5}$O$_{12}$ substrate, indicating large can be achieved irrespective crystallinity. deduced mixing conductance from Pt thickness dependence of find high quality optimized terms current. also clarified correlates well with roughness, carrier density. These findings highlight optimizing YIG properties a key control magnetization current, leading development low power consumption spintronic device based magnetic insulator.