منابع مشابه
Optical spin hall effect.
A remarkable analogy is established between the well-known spin Hall effect and the polarization dependence of Rayleigh scattering of light in microcavities. This dependence results from the strong spin effect in elastic scattering of exciton polaritons: if the initial polariton state has a zero spin and is characterized by some linear polarization, the scattered polaritons become strongly spin...
متن کاملNonballistic spin-field-effect transistor.
We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba couplin...
متن کاملUniversal intrinsic spin Hall effect.
We describe a new effect in semiconductor spintronics that leads to dissipationless spin currents in paramagnetic spin-orbit coupled systems. We argue that in a high-mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin current that flows perpendicular to the charge current is intrinsic. In the usual case where both spin-orbit split bands are occupied, the...
متن کاملThe Quantum Spin Hall Effect
Most quantum states of condensed matter are classified by the symmetries they break. For example, crystalline solids break translational symmetry, and ferromagnets break rotational symmetry. By contrast, topological states of matter evade traditional symmetrybreaking classification schemes, and they signal the existence of a fundamentally different organizational principle of quantum matter. Th...
متن کاملSpin current, spin accumulation and spin Hall effect.
Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device...
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ژورنال
عنوان ژورنال: Science
سال: 2010
ISSN: 0036-8075,1095-9203
DOI: 10.1126/science.1195816