Spin-dependent tunneling in FM∣semiconductor∣FM structures

Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures

Silicon is an ideal material for spintronic applications due to its weak spin-orbit interaction and long spin lifetime [1,2]. Spin injection from a ferromagnetic electrode into n-type silicon was claimed at room [3] and elevated [4] temperatures. However, the amplitude of the spin-accumulation signal extracted from a three-terminal injection method [2,3] is orders of magnitude higher than predi...

Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures

Interface effects in spin-dependent tunneling

In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental ques...

Spin-dependent tunneling in magnetic tunnel junctions

The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunneling magnetoresistance (TMR)...

Spin-dependent tunneling and Coulomb blockade in ferromagnetic nanoparticles

In this paper we review studies on spin-dependent transport in systems contain-ing ferromagnetic nanoparticles. In a tunnel junction with a nanometer-scale-island, the charging effect leads to an electric current blockade phenomenon inwhich a single electron charge plays a significant role in electron transport, re-sulting in single-electron tunneling (SET) properties such a...