Spin-dependent resonant tunneling in semiconductor nanostructures

Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures

Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures

Silicon is an ideal material for spintronic applications due to its weak spin-orbit interaction and long spin lifetime [1,2]. Spin injection from a ferromagnetic electrode into n-type silicon was claimed at room [3] and elevated [4] temperatures. However, the amplitude of the spin-accumulation signal extracted from a three-terminal injection method [2,3] is orders of magnitude higher than predi...

Bidirectional resonant tunneling spin pump

Resonant tunneling-based spin ratchets

We outline a generic ratchet mechanism for creating directed spin-polarized currents in ac-driven double well or double dot structures by employing resonant spin transfer through the system engineered by local external magnetic fields. We show its applicability to semiconductor nanostructures by considering coherent transport through two coupled lateral quantum dots, where the energy levels of ...

Persistent Spin Textures in Semiconductor Nanostructures

Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling electron spins in semiconductors are generically subject to rather fast decoherence. In two-dimensional quantum wells made of zinc-blende semiconductors, however, ...