Spin-dependent electron transport through a magnetic resonant tunneling diode
نویسندگان
چکیده
منابع مشابه
High magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode
We have measured the magnetotransport of double GaAs quantum well-triple AlAs barrier resonant tunneling heterostructures in pulsed magnetic fields up to 48 T, and temperatures down to 0.3 K. The tunneling structure is designed for a near-simultaneous (triple) resonance, under bias, of the quantum well energy levels and the lowest quasi-2D emitter state. The fan chart of the I(V) resonances is ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.71.235301