Spectral Hole-Burning of Nd3+ Doped Germanosilicate Fiber
نویسندگان
چکیده
منابع مشابه
Efficient spectral hole-burning and atomic frequency comb storage in Nd3+:YLiF4
We present spectral hole-burning measurements of the (4)I9/2 → (4)F3/2 transition in Nd(3+):YLiF4. The isotope shifts of Nd(3+) can be directly resolved in the optical absorption spectrum. We report atomic frequency comb storage with an echo efficiency of up to 35% and a memory bandwidth of 60 MHz in this material. The interesting properties show the potential of this material for use in both q...
متن کاملPhotodarkening of 488nm-pumped Sm-doped germanosilicate fiber laser
Photodarkening in samarium doped germanosilicate fiber and laser by downconversion is studied. Appreciable photodarkening occurs in the fiber and we attribute the effect to color centres which are both related to Sm2O3 and GeO2. An energy level scheme has been illustrated to explain the photodarkening mechanism.
متن کاملSlow light using spectral hole burning in a Tm3+-doped yttrium-aluminum-garnet crystal
We report on light slowing down in a rare-earth-metal-ion-doped crystal by persistent spectral hole burning. The absence of motion of the active ions, the large inhomogeneous broadening, the small homogeneous width, and the long lifetime of the hyperfine shelving states make this material convenient for the burning of narrow persistent spectral holes. Since the hole can be burnt long before the...
متن کاملSpectral hole burning and selection of conformational substates in chromoproteins.
We investigated spectral holes burnt at 1.5 K into the origins of several tautomeric forms of mesoporphyrin IX-substituted horseradish peroxidase at pH 8 under pressures up to 2 MPa. From the pressure-induced lineshift the compressibility of the apoprotein could be determined. We found that the compressibility changed significantly when measured at different tautomer origins. It was concluded t...
متن کاملAnalytical description of spectral hole-burning effects in active semiconductors.
An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal de Physique III
سال: 1995
ISSN: 1155-4320,1286-4897
DOI: 10.1051/jp3:1995121