Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations
نویسندگان
چکیده
منابع مشابه
Variability Study of Silicon Nanowire FETs
Yi-Bo Liao, Meng-Hsueh Chiang, Keunwoo Kim, and Wei-Chou Hsu Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan Department of Electronic Engineering, National Ilan University, I-Lan 260, Taiwan IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA E-mail: [email protected], Tel: +886-3-9357400 ext. 653, Fax: +886...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2018
ISSN: 2168-6734
DOI: 10.1109/jeds.2018.2828504