Solution-based low-temperature synthesis of germanium nanorods and nanowires
نویسندگان
چکیده
منابع مشابه
Solution synthesis of germanium nanowires using a Ge2+ alkoxide precursor.
A simple solution synthesis of germanium (Ge0) nanowires under mild conditions (<400 degrees C and 1 atm) was demonstrated using germanium 2,6-dibutylphenoxide, Ge(DBP)2 (1), as the precursor where DBP = 2,6-OC6H3(C(CH3)3)2. Compound 1, synthesized from Ge(NR2)2 where R = SiMe3 and 2 equiv of DBP-H, was characterized as a mononuclear species by single-crystal X-ray diffraction. Dissolution of 1...
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Herein, we describe the controlled growth of 1 dimensional germanium nanostructures from high aspect ratio nanowires (>10 microns in length) to shorter aspect nanorods (100 nm in length) via a simple pyrolysis method. The synthetic route involves the thermal decomposition of selected germanium precursors by dropping a solution in a high boiling point solvent directly onto a pre-heated Si wafer ...
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Chemically derived nanowire materials have attracted much attention because of their interesting geometries, properties, and potential applications.[1±3] Various methods have been developed for synthesizing semiconducting nanowires including laser ablation,[2,3] physical vapor deposition under high temperatures,[3±7] and solvothermal growth under high pressures and moderate temperatures.[3,8±10...
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As a promising electronic material, Ge nanowire (GeNW) has attracted much attention for its low band gaps, high mobilities, and unprecedented dimensions. This article reviews recent research and advancement on this topic and summarizes many aspects of GeNWs, including preparation, surface chemistry, physical properties, functional devices, and controlled assembly. It is shown that GeNWs can be ...
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ژورنال
عنوان ژورنال: Monatshefte für Chemie - Chemical Monthly
سال: 2018
ISSN: 0026-9247,1434-4475
DOI: 10.1007/s00706-018-2191-1