Solid solubility and site preference of Ti in 3C- and 6H-SiC
نویسندگان
چکیده
Ti is a background impurity in SiC due to its presence the graphite parts of production furnace, and it has large impacts on electrical magnetic performance SiC. Herein, solid solubilities 3C- 6H-SiC were measured at SiC–TiSi2 thermodynamic equilibrium, values enthalpy entropy dissolution for estimated through analysis, which also confirmed using formation energy calculation defects. The soft X-ray emission (SXE) lines Ti-L? Ti-doped explained by calculated hole transition energies (HTEs) between L1 M3 levels different possible defects, experimentally indicating that prefers substitution Si-site both 6H-SiC. Additionally, zero-phonon line (ZPL) provided explanation origin ZPLs photoluminescence (PL) spectra
منابع مشابه
Shallow P donors in 3C-, 4H-, and 6H-SiC
EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free f...
متن کاملGeometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C an...
متن کاملStructures of 6H-SiC Surfaces
We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...
متن کاملsynthesis of sulfides from alcohols and thiols in solvent-freeconditions and deoxygenation of sulfoxides
کاتالیست یک سنتز جدید برای تیواترها توصیف شده است. واکنش الکل ها با آریل، هتروآریل و آلکیل تیو ل ها درحضور 1،3،5- تری آزو- 2،4،6- تری فسفرین-2،2،4،4،6،6 هگزاکلراید ((tapc به عنوان یک کاتالیست موُثر، بازده های خوب تا عالی از تیواترها را حاصل می کند. علاوه براین، واکنش تحت شرایط بدون فلز و بدون حلال پیش می رود، بنابراین یک مکمل جالب برای روش های شناخته شده سنتز تیواترها ارائه می دهد. یک مکانیسم ا...
15 صفحه اولAC Hot Carrier Transport in 3C{ and 6H{SiC in the Terahertz Frequency and High Lattice Temperature Regime
The complex mobility of electrons in 3C{ and 6H{SiC subjected to intense high frequency electric elds is calculated taking into account e ects of band nonparabolicity. The electric eld, given by a dc component plus an ac component in the frequency range 0.1-100 THz, is applied along the [0001] ([111]) direction in the hexagonal (cubic) polytype. The real electron mobility presents a characteris...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materialia
سال: 2022
ISSN: ['2589-1529']
DOI: https://doi.org/10.1016/j.mtla.2022.101369