Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering

Tin Oxide Thin Films Grown on the (1̄012) Sapphire Substrate

Tin oxide thin films were deposited on the R-cut sapphire substrate by the electron-beam evaporation of a ceramic SnO2 source. X-ray diffraction and transmission electron microscopy studies revealed that the films deposited at lower temperatures were amorphous while those grown at temperatures above 350◦C consisted of the α-SnO phase with the PbO type structure. Epitaxial α-SnO films on the R-c...

Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

Eu-doped GaN films grown on sapphire and GaAs substrates by RF magnetron sputtering

The growth of Eu-doped GaN (GaN:Eu) films has been performed on GaAs (100) substrates using RF magnetron sputtering method. The GaN layers exhibit a wurtzite structure. Substrate temperature and the pressure during the deposition do not influence the orientation of GaN:Eu films. After annealing of GaN films in NH3, a strong red luminescence at 622 nm due to Eu ions has been observed.

Solid phase recrystallization of ZnS thin films on sapphire

High quality ZnS thin films are important for light emitting diodes based on ZnS, which is a very efficient phosphor. To improve as grown, molecular beam epitaxial, ~111!-oriented cubic ZnS films, where defects were introduced due to the large mismatch between ZnS and a sapphire substrate (;20%), the ZnS was recrystallized by annealing at temperatures in the 825– 1000 °C range, and sulfur press...

Extended Skyrmion phase in epitaxial FeGe(111) thin films.

The Skyrmion state in epitaxial B20 FeGe(111) thin films, determined by the topological Hall effect, is greatly extended in the phase diagram to cover all temperatures up to the Curie temperature T(C)≈271 K and over a wide magnetic field range that includes a zero magnetic field. The properties of the Skyrmion phase can be controlled and manipulated by the film thickness, which has a strong eff...