Single phase, single orientation Cu2O (1 0 0) and (1 1 0) thin films grown by plasma-assisted molecular beam epitaxy
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منابع مشابه
Electrical and optical studies of GaMnAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) measurements from 8 to 300K. The carrier concentrations in the samples grown at a low substrate temperature are greater than those in the samples grown at a high substrate temperature. The PL spectra show a GaAs exciton ...
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In this work, the structural and magnetic properties of LaMn1-xCoxO3 (x = 0.00, 0.25, 0.50, 0.75, 1.00) are investigated. The structural characterization of compounds by X-ray powder diffraction is evidence for a rhombohedral structure (R -3c space group). Much less increase of the unit cell volume suggests that Co enters in lattice as Co+2 for x ≤ 0.5 while much more decrease of the unit cell ...
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Cadmium chalcogenides with appropriate band gap energy have been attracting a great deal of attention because of their potential applications in optoelectronic devices. In this work CdS thin films were deposited on p – type silicon substrates by sol – gel spin coating method at different substrate temperatures. The CdS deposited wafers were characterized by X‐ray diffracti...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2015
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2014.10.045