Single layer MoS2 nanoribbon field effect transistor
نویسندگان
چکیده
منابع مشابه
Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
S. Fathipour, M. Remskar, A. Varlec, A. Ajoy, R. Yan, S. Vishwanath, S. Rouvimov, W. S. Hwang, H. G. Xing, D. Jena, and A. Seabaugh Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Solid State Physics Department, Jo!zef Stefan Institute, Ljubljana, Slovenia Department of Electrical Engineering, Cornell University, Ithaca, New York 14850, USA Departm...
متن کاملGraphene nanoribbon field-effect transistor at high bias
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, c...
متن کاملTheoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor
Graphene nanoribbons with zigzag edges show metallic behavior and are thus considered not appropriate for transistor applications. However, we show that by engineering line defects and using positive substrate impurities one can obtain a suitable effective transport gap at least for analog applications. The transfer and output characteristics of these structures are investigated employing quant...
متن کاملTrilayer Graphene Nanoribbon Field Effect Transistor Analytical Model
The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked tr...
متن کاملAtomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.
The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2019
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5079860