Single-electron tunneling through an individual arsenic dopant in silicon
نویسندگان
چکیده
منابع مشابه
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy.
We study subsurface arsenic dopants in a hydrogen-terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant-related features that fall into two classes, which we call As1 and As2. When imaged in occupied states, the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography and have maximu...
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ژورنال
عنوان ژورنال: Nanoscale
سال: 2017
ISSN: 2040-3364,2040-3372
DOI: 10.1039/c6nr07258e