Single-electron tunneling in InP nanowires

Single-electron tunneling in InP nanowires

We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti...

FEW ELECTRON QUANTUM DOTS IN InAs/InP CORE SHELL NANOWIRES

Single Electron Tunneling Junctions

This paper and its associated Python programs explore the dynamics of single electron tunneling junction (SETJ) circuits. SETJs can potentially be used as nonlinear circuit elements to implement new paradigms for information processing. I show that an isolated SETJ circuit with a constant bias voltage and sinusoidal pump offset can produce a variety of interesting nonlinear behavior. By adjusti...

Single-Electron Tunneling Devices

Single-electron tunneling devices can detect charges much smaller than the charge of an electron. This enables phenomenally precise charge measurements and it has been suggested that large scale integration of single-electron devices could be used to construct logic circuits with a high device packing density. Here the operation of the two basic types of single-electron tunneling transistors is...

Single-electron Tunneling

The charge stored on a capacitor is not quantized: it consists of polarization charges generated by displacing the electron gas with respect to the positive lattice ions and can take arbitrary magnitudes. The charge transfer across a tunnel junction, however, is quantized in units of the electron charge (singleelectron tunneling), and may be suppressed due to the Coulomb interaction (Coulomb bl...