Single Crystalline InxGa1-xAs Nanowires on Si (111) via VLS Method
نویسندگان
چکیده
منابع مشابه
Characteristics of Strain-Induced InxGa1−xAs Nanowires Grown on Si(111) Substrates
Large strain-energy arising from lattice mismatch allows one-dimensional heteroepitaxial growth of InxGa1−xAs on silicon substrates without any catalyst or pattern assistance. In this paper, we show that in contrast to nanowires (NWs) grown by metal-catalyzed vapor−liquid− solid mechanism, strain-induced InxGa1−xAs NWs have several unique morphological features including no tapering, slight ben...
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Self-catalyzed growth of axial In(x)Ga(1-x)As/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the growth it was possible to vary the effective indium content up to x = 5%, as deduced from photoluminescence measurements. We have analyzed...
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Although the various effects of strain on silicon are subject of intensive research since the 1950s the physical background of anomalous piezoresistive effects in Si nanowires (NWs) is still under debate. Recent investigations concur in that due to the high surface-to-volume ratio extrinsic surface related effects superimpose the intrinsic piezoresistive properties of nanostructures. To clarify...
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We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from ± (0.015)% to ± (0.03)%. This micro-strain contributes to the line...
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ژورنال
عنوان ژورنال: Journal of the Korean Vacuum Society
سال: 2013
ISSN: 1225-8822
DOI: 10.5757/jkvs.2013.22.2.105