Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Conventional biosensor designs are often vulnerable to issues like random dopant fluctuations (RDFs) and high thermal budgets due their design the device they based on. The main reason behind such is complexity of maintaining uniform doping levels throughout structure. This manuscript investigates a structure utilizing dual pocket junctionless SiGe-Heterostructured TFET overcome shortcomings. implementation charge plasma technique with $$\mathrm {1}\times \mathrm {10}^{\mathrm {15}} {cm}^{\mathrm {-3}}$$ along an integrated SiGe-Heterostructure layer has improved tunneling process while also effectively eliminating (RDF). Again overall performance depends on sensitivity sensor design. Increasing trapping area for biomolecules at same technological node by increasing length or adding region leads rapid changes in sensor’s electric properties owing shifting dielectric constants (k) densities (in both positive negative situations), improving detection process. influence these parameters device’s Drain current, Surface Potential, Electron Tunneling Rate (ETR), Subthreshold Swing (SS), Ion/Ioff ratio explored. introduction added gives us scalability showing higher {5.38} \times {9}}$$ constant being 12 neutrally charged rising nearly {1.43} {10}}$$ if molecules positively charged. With improvement drain current additional design, this work will undoubtedly give researchers roadmap future generation highly sensitive alternatives.