Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell
نویسندگان
چکیده
Abstract In this study, copper bismuth oxide (CuBi 2 O 4 ) absorber-based thin film heterojunction solar cell structure consisting of Al/FTO/CdS/CuBi /Ni has been proposed. The proposed device modeled and analyzed by using the capacitance simulator in one dimension (SCAPS-1D) software program. performance photovoltaic is evaluated numerically varying thickness, doping concentrations, defect density, operating temperature, back metal contact work function, series shunt resistances. current density–voltage behaviors at dark under illumination are investigated. To realize high efficiency CuBi -based cell, acceptor donor densities, densities different layers have optimized. present reveals that power conversion can be enhanced increasing absorber layer thickness. 26.0% with open-circuit voltage 0.97 V, short-circuit density 31.61 mA/cm , fill-factor 84.58% achieved for optimum 2.0-?m-thick layer. It suggested p-type material study employed as a promising applications low cost thin-film cells.
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ژورنال
عنوان ژورنال: SN applied sciences
سال: 2021
ISSN: ['2523-3971', '2523-3963']
DOI: https://doi.org/10.1007/s42452-021-04554-z