Silicon Resistivity Behaviour
نویسندگان
چکیده
Intrinsic resistivity of any semiconductor silicon layer strongly depends on dopants and impurities concentrations. Structural properties, treating, coating, finishing etc. affect dynamic resistance behaviour a given p-n junction in wafer. It is important for massively used photovoltaics, optoelectronics, microelectronics, other solid-state electronics. In this work, efficient, universally applicable methodology presented to investigate resistive parameters. First, the band gap models are studied. Influence electrical resistances complex impedance parts investigated. Dynamic iterative numerical modelling simulations combined with sparse-matrix experimental measurements lead extrapolated behaviours these All parameters investigated within acceptable practical interval up extremals.
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ژورنال
عنوان ژورنال: Advances in Electrical and Electronic Engineering
سال: 2021
ISSN: ['1804-3119', '1336-1376']
DOI: https://doi.org/10.15598/aeee.v19i2.4140