Silicon oxide by plasma enhanced decomposition of TEOS.

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

MICROSTRUCTURAL STUDY OF SILICON NITRIDE WHISKERS PRODUCED BY NITRIDATION OF PLASMA-SPRAYED SILICON LAYERS

plasma-sprayed silicon layers have been used to produce silicon nitride layers with fibrous microstructure which optimizes fracture toughness and strength. SEM examination of the specimens shows that the surface is covered by fine needles and whiskers of Si3N4.In order to study the oxygen contamination effect as well as other contaminants introduced during spraying and nitridation processes, su...

متن کامل

Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition.

The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optic...

متن کامل

Synthesis of Chromium Oxide Nano Particles by Thermal Decomposition Method

Disclosed is a method of preparing pigmentary chromium oxide nano particles having 50 percent particle size less than about 100 nm. Preparation of nano chromium (III) oxide is investigated by thermal decomposition method. According to the disclosed method, a substantially dry solid composition of potassium dichromate and carbon active is heated in CO2 atmosphere to a temperature of about 60...

متن کامل

Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane

Thin silicon dioxide films have been studied as a function of deposition parameters and annealing temperatures. Films were deposited by tetraethoxysilane (TEOS) dual-frequency plasma enhanced chemical vapor deposition with different time interval fractions of high-frequency and low-frequency plasma depositions. The samples were subsequently annealed up to 930 ◦C to investigate their stress beha...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: KAGAKU KOGAKU RONBUNSHU

سال: 1990

ISSN: 0386-216X,1349-9203

DOI: 10.1252/kakoronbunshu.16.487