منابع مشابه
Near-field scanning optical nanolithography using amorphous silicon photoresists
Near-field scanning optical microscopy ~NSOM! patterning of hydrogenated amorphous silicon (a-Si:H) has been explored. Our sample preparation technique produces films that are stable over several days. The etching process used is highly selective, allowing the unexposed a-Si:H to be completely removed while patterns with line heights equal to the original film thickness remain in exposed region...
متن کاملSpin Coating of Photoresists
During spincoating, the centrifugal force of the substrate spinning with several 1.000 rounds per minute (rpm) distributes few ml of resist over the substrate. Advantages: The high resist film thickness homogeneity as well as the short coating times make spincoating the most-applied coating technique at least in microelectronics. The fact that the coated resist already lost a significant amount...
متن کاملExposure of Photoresists
Mask-Aligner and Stepper The typical emission spectrum of a mask aligner or stepper with Hg light source and without optical selective mirrors/filters contains g(wavelength 436 nm), h(405 nm) and i-line (365 nm), with an i-line intensity approx. 40 % of the total emission between 440 and 340 nm. The absorption spectrum (spectral sensitivity see next section) of AZ® and TI photoresists is matche...
متن کاملExposure of Photoresists
Mask-Aligner and Stepper The typical emission spectrum of a mask aligner or stepper with Hg light source and without optical selective mirrors/filters contains g(wavelength 436 nm), h(405 nm) and i-line (365 nm) (fig. right-hand), with an iline intensity approx. 40 % of the total emission between 440 and 340 nm. The absorption spectrum (spectral sensitivity see next section) of AZ® and TI photo...
متن کاملPositive Photoresists - Exposure
There are a large number of materials, both organic and inorganic, which are sensitive to light (see, for example, Ref. 1). However, over the years one specific class of photosensitive materials has been dominate in the application of integrated circuit manufacturing -the diazonaphthoquinone/novolak system found in conventional g-line and i-line positive photoresists. Rather than present a comp...
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2001
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.14.503