Si:HgTe Colloidal Quantum Dots Heterojunction-Based Infrared Photodiode
نویسندگان
چکیده
Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of in machine vision, autonomous vehicles, night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) promising materials. Because adjustable bandgap, it responds over a wide spectral range. construction high-quality junction between Si CQDs continues to be difficult, thus restricting scope its application. In this article, we describe synthesis, characterization, correlation with reaction temperature nanocrystal size. We then fabricated HgTe-CQDs/silicon photodiodes discussed how resistivity affected their performance. found that devices prepared from 9.1 nm synthesized at 80°C substrate 20–50 Ω·cm has optimal performance parameters. This results responsivity 0.2 mA/W for 1,550 incident light room temperature. These provide direction future silicon-compatible dot optoelectronics.
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2023
ISSN: ['1687-4110', '1687-4129']
DOI: https://doi.org/10.1155/2023/4595819