SIGNAL RELAXATION IN IMAGE SENSOR BASED ON NONIDEAL HETEROJUNCTIONS
نویسندگان
چکیده
منابع مشابه
The Novel Image Signal Analysis of Monitoring Video Based on CMOS Image Sensor
The image sensor is the most important part of video and still image processing line in digital video or still camera. Data of CMOS process will produce noise in long transmission distance; therefore it must first be amplified and integrated each pixel data. The choice of medium and apparatus for transmitting image and the other the control signal will be directly related to the quality and rel...
متن کاملSensor noise effects on signal-level image fusion performance
The aim of this paper is twofold: (i) to define appropriate metrics which measure the effects of input sensor noise on the performance of signal-level image fusion systems and (ii) to employ these metrics in a comparative study of the robustness of typical image fusion schemes whose inputs are corrupted with noise. Thus system performance metrics for measuring both absolute and relative degrada...
متن کاملUltra-High-Speed Image Signal Accumulation Sensor
Averaging of accumulated data is a standard technique applied to processing data with low signal-to-noise ratios (SNR), such as image signals captured in ultra-high-speed imaging. The authors propose an architecture layout of an ultra-high-speed image sensor capable of on-chip signal accumulation. The very high frame rate is enabled by employing an image sensor structure with a multi-folded CCD...
متن کاملImage enhancement based on signal subspace approach
This paper describes a block-by-block basis image enhancement algorithm which uses the signal subspace method to enhance images corrupted by uncorrelated additive noise. The enhancement is performed by eliminating the noise components in the noise subspace and estimating the clean image from the remaining components in the signal subspace.
متن کاملTunnel switch diode based on AlSbÕGaSb heterojunctions
We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic ‘‘S’’ shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Sensor Electronics and Microsystem Technologies
سال: 2014
ISSN: 2415-3508,1815-7459
DOI: 10.18524/1815-7459.2004.1.111828