Si/Ge intermixing during Ge Stranski–Krastanov growth
نویسندگان
چکیده
منابع مشابه
Si/Ge intermixing during Ge Stranski–Krastanov growth
The Stranski-Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electr...
متن کاملLateral Ge Diffusion During Oxidation of Si/SiGe Fins.
This Letter reports on the unusual diffusion behavior of Ge during oxidation of a multilayer Si/SiGe fin. It is observed that oxidation surprisingly results in the formation of vertically stacked Si nanowires encapsulated in defect free epitaxial strained SixGe1-x. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) shows that extremely enhanced diffusion of Ge ...
متن کاملReconstruction and intermixing in thin Ge layers on Si „ 001 ...
In this work the Monte Carlo method with an empirical potential model for atomic interactions is applied to study reconstruction and intermixing at a Ge-covered Si~001! surface. We investigate the structure and energetics of the 23n reconstruction which serves as a strain-relief mechanism. The optimal value of n is found to be strongly dependent on the thickness of the Ge overlayer. Si-Ge inter...
متن کاملSi, SiGe, Ge, and III-V Semiconductor Nanomembranes and Nanowires Enabled by SiGe Epitaxy
SiGe epitaxy in conjunction with selective etching lends itself as an excellent method for manufacturing of nanomembranes and nanowires as well as for “universal” semiconductor substrates capable of accommodating various advanced CMOS including optoelectronics applications. Early device application of this technique has been demonstrated for the device architecture of SON and GeON MOSFETs allow...
متن کاملBandstructure and photoluminescence of SiGe islands with controlled Ge concentration
The dependence of the photoluminescence (PL) emission wavelength of SiGe islands embedded into a Si matrix on their Ge concentration and gradient was investigated. Intense PL signals at wavelengths that can be shifted over most of the telecom wavelength range (1.38–1.77 mm) by varying the Ge concentration were observed. Using the structural island parameters determined by AFM, TEM, and a carefu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Beilstein Journal of Nanotechnology
سال: 2014
ISSN: 2190-4286
DOI: 10.3762/bjnano.5.246