منابع مشابه
Spontaneously forming 30-150Å Defects at the Si/oxide interface
A previously perforated planar TEM specimen of silicon sample (8GLJH-060) was ion milled for 10s using two argon guns at an angle of 20°, 0.5mA per gun and a fixed voltage of 4kV. The time the specimen surface was in contact with air was minimized to 3min, by taking it out of the ion mill and putting it in the electron microscope airlock immediately afterwards. The silicon wafer was left in the...
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Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiOz interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both nand ptype silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS phys...
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We have performed first principles calculations to investigate the structure and electronic properties of several different Si–HfOx interfaces. The atomic structure has been obtained by growing HfOx layer by layer on top of the Si 100 surface and repeatedly annealing the structure using ab initio molecular dynamics. The interfaces are characterized via their geometric and electronic properties,...
متن کاملGraphene oxide hydrogel at solid/liquid interface.
A strong solid/liquid interfacial interaction is found between porous alumina and graphene oxide (GO) aqueous dispersion, which promotes a fast enrichment of GO on the alumina surface and results in the formation of a GO hydrogel.
متن کاملFull-Field Strain Mapping at a Ge/Si Heterostructure Interface
The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si hetero...
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ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals and Materials
سال: 1987
ISSN: 0021-4876,1880-6880
DOI: 10.2320/jinstmet1952.51.2_138