SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation
نویسندگان
چکیده
منابع مشابه
SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation
Article history: Received 25 May 2015 Received in revised form 20 June 2015 Accepted 24 June 2015 Available online xxxx
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2015
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2015.06.107