SEU hardened layout design for SRAM cells based on SEU reversal
نویسندگان
چکیده
منابع مشابه
SEU-Tolerant SRAM Design Based on Current Monitoring
In this paper, we present a new technique to improve the reliability of SRAMs used in space radiation environments. This technique deals with the SRAM power-bus monitoring by using Built-In Current Sensor (BICS) circuits that detect abnormal current dissipation in the memory power-bus. This abnormal current is the result of a single-event upset (SEU) in the memory and it is generated during the...
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OF THESIS Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science Electrical Engineering The University of New Mexico Albuquerque, New Mexico
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The application of Static Random-Access Memory (SRAM), becomes more and more widely in aviation. However, the large amount of SRAM cells is very vulnerable to radiation included single-event upset (SEU). Based on the detection requirement of SRAM’s SEU, the detected circuit of the SEU on SRAM is designed. Then the method of redundancy check is used in the reinforcement of the SEU. The test resu...
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Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implem...
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2015
ISSN: 1349-2543
DOI: 10.1587/elex.12.20150804