Self-Organized Quantum Dots

Magnetoluminescence of Annealed Self-Organized InGaAs/GaAs Quantum Dots

We have investigated the effects of annealing a self-assembled InGaAs/GaAs quantum dot sample between 580 and 700 C by magnetoluminescence measurements at 2 K and fields up to 15 T. By using a high power density of about 5 kW/cm2 for the excitation of the luminescence we were able to observe up to three features in addition to the ground-state emission arising from radiative recombination proce...

Time-Resolved Electronic Relaxation Processes In Self-Organized Quantum Dots

Strain-induced quantum dots by self-organized stressors

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Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski-Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dot...

Self-organized growth, ripening, and optical properties of wide-bandgap II—VI quantum dots

We discuss the formation of self-assembling II—VI quantum dots during MBE growth, with emphasis on CdSe dots grown on ZnSe. AFM measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 35$5 nm. Uncapped CdSe dots are unstable with time, showing clear evidence of ripening. Photoluminescence from capped dots indicates strong exciton...