Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
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چکیده
منابع مشابه
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self-aligned geometries, palladium electrodes with low contact resistance, and high-K dielectric gate insulators are realized. Electrical transport in these miniature transistors is nearly ballistic up to high biases at both room and low temperatures. Atomic-layer-...
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Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2004
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl049222b