Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate

Liquid phase epitaxy growth of Pb , - $ nse with BaF , 1 + Te , , alloys lattice matched

IV-VI semiconductor quaternary alloys lattice matched with BaF2 substrates have been grown by liquid phase ,epitaxy. X-ray diffraction analysis shows that liquid (Pbl-,~Sn,L)0.99(Sel--YLTe~L)0.01 solutions produce Pbt -+Sn,,Ser -rsTey, alloys lattice matched with the substrate when yL=60%, SS%, and 57%, and x,=20%, 40%, and 60%, respectively. These data, which can be used to fabricate lattice-m...

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial het...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface eve...