Secondary-Phase-Assisted Grain Boundary Migration in CuInSe2

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Shear-coupled grain boundary migration assisted by unusual atomic shuffling

Shear-coupled grain boundary (GB) migration can be an efficacious mechanism to accommodate plastic deformation when the grain size of polycrystalline materials goes small. Nevertheless, how this kind of GB motion comes into play at the atomic level has not been fully revealed. Here, we have investigated the shear-coupled migration (SCM) of typical [100] group symmetrical tilt GBs in bcc W using...

متن کامل

Effect of Grain-Boundary Phase

Two types of hot-pressed silicon nitride, one having an amorphous grain-boundary phase (6 wt% yttria, 3 wt% alumina) and the other having a predominantly crystalline grain-boundary phase (8 wt% yttria, 1 wt% alumina), were tested on a split Hopkinson pressure bar with a momentum trap, such that, in each test, the sample was subjected to a single predefined stress pulse and then recovered withou...

متن کامل

Vacancy Generation During Grain Boundary Migration

We present a molecular dynamics simulation study of vacancy generation and emission from grain boundaries during curvature-driven grain boundary migration. The U-shaped half-loop bicrystal geometry is employed in order to maintain a constant driving force during boundary migration. Nonlinearities in plots of half-loop grain area versus time indicate the onset of non-steady-state behavior and va...

متن کامل

Anomalous grain boundary physics in polycrystalline CuInSe2: the existence of a hole barrier.

First-principles modeling of grain boundaries (GB) in CuInSe2 semiconductors reveals that an energetic barrier exists for holes arriving from the grain interior (GI) to the GB. Consequently, the absence of holes inside the GB prevents GB electrons from recombining. At the same time, the GI is purer in polymaterials than in single crystals, since impurities segregated to the GBs. This explains t...

متن کامل

Atom-by-atom observation of grain boundary migration in graphene.

Grain boundary (GB) migration in polycrystalline solids is a materials science manifestation of survival of the fittest, with adjacent grains competing to add atoms to their outer surfaces at each other's expense. This process is thermodynamically favored when it lowers the total GB area in the sample, thereby reducing the excess free energy contributed by the boundaries. In this picture, a cur...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical Review Letters

سال: 2020

ISSN: 0031-9007,1079-7114

DOI: 10.1103/physrevlett.124.095702