Secondary-Phase-Assisted Grain Boundary Migration in CuInSe2
نویسندگان
چکیده
منابع مشابه
Shear-coupled grain boundary migration assisted by unusual atomic shuffling
Shear-coupled grain boundary (GB) migration can be an efficacious mechanism to accommodate plastic deformation when the grain size of polycrystalline materials goes small. Nevertheless, how this kind of GB motion comes into play at the atomic level has not been fully revealed. Here, we have investigated the shear-coupled migration (SCM) of typical [100] group symmetrical tilt GBs in bcc W using...
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First-principles modeling of grain boundaries (GB) in CuInSe2 semiconductors reveals that an energetic barrier exists for holes arriving from the grain interior (GI) to the GB. Consequently, the absence of holes inside the GB prevents GB electrons from recombining. At the same time, the GI is purer in polymaterials than in single crystals, since impurities segregated to the GBs. This explains t...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2020
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.124.095702