Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes

We investigate the second spectrum of charge carrier density fluctuations in graphene within McWorther model, where noise is induced by electron traps substrate. Within this simple picture, we obtain a closed-form expression including both Gaussian and non-Gaussian fluctuations. show that very extended distribution switching rates substrate leads to power with non-trivial structure on scale measurement bandwidth. This explains appearance 1/f component part spectrum, which adds up expected frequency-independent term. Finally, find can become quantitatively relevant approaching extremely low temperatures.