Sec‐Eliminating the SARS‐CoV‐2 by AlGaN Based High Power Deep Ultraviolet Light Source

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters

Distinct U-shape efficiency-versus-current curves in AlGaN-based deep-ultraviolet light-emitting diodes.

The efficiency of an AlGaN deep-ultraviolet light-emitting diode with peak emission wavelength of 285 nm is investigated as a function of current over a wide range of temperatures (110 K to 300 K). We find that the efficiency-versus-current curve exhibits unique and distinct features over the entire temperature range including three points of inflection. At low temperatures, the change in slope...

Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.

The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. A...

Deep ultraviolet photodetectors grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

Optically-based chemical and biological sensors require optoelectronic devices with specific emission and detection wavelength ranges. Semiconductor optoelectronic devices applicable to this sensing are of particular interest due to their low power consumption, compact size, long lifetime, and low cost. We report the electrical and optical properties of deep UV p-i-n photodiodes (PDs) based on ...